vs-10etf1...fppbf series, vs-10etf1...fp-m3 series www.vishay.com vishay semiconductors revision: 18-jun-13 1 document number: 94093 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fast soft recovery r ectifier diode, 10 a features ? 150 c max. operation junction temperature ? designed and qualified according to jedec-jesd47 ? fully isolated package (v ins = 2500 v rms ) ? ul e78996 approved ? material categorization: ? for definitions of co mpliance please see www.vishay.com/doc?99912 applications these devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted emi should be met. description the vs-10etf1..fp... fast soft re covery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. ? the glass passivation ensures st able reliable operation in the most severe te mperature and power cycling conditions. product summary package to-220fp i f(av) 10 a v r 1000 v, 1200 v v f at i f 1.33 v i fsm 140 a t rr 80 ns t j max. 150 c diode variation single die snap factor 0.6 base cathode 2 13 anode cathode to-220ac full-pak a v aila b le major ratings and characteristics symbol characteristics values units v rrm 1000 to 1200 v i f(av) sinusoidal waveform 10 a i fsm 140 t rr 1 a, 100 a/s 80 ns v f 10 a, t j = 25 c 1.33 v t j - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non- repetitive peak reverse voltage v i rrm at 150 c ma vs-10etf10fppbf, vs-10etf10fp-m3 1000 1100 4 vs-10etf12fppbf, vs-10etf12fp-m3 1200 1300 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 95 c, 180 conduction half sine wave 10 a maximum peak one cycle ? non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 115 10 ms sine pulse, no voltage reapplied 140 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 66 a 2 s 10 ms sine pulse, no voltage reapplied 94 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 940 a 2 ? s
vs-10etf1...fppbf series, vs-10etf1...fp-m3 series www.vishay.com vishay semiconductors revision: 18-jun-13 2 document number: 94093 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 10 a, t j = 25 c 1.33 v forward slope resistance r t t j = 150 c 22.9 m ? threshold voltage v f(to) 0.96 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 4 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 10 apk 25 a/s ? 25 c 310 ns reverse recovery current i rr 4.7 a reverse recovery charge q rr 1.05 c snap factor s0.6 i fm t rr dir dt i rm(rec) q rr t thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg - 40 to 150 c maximum thermal resistance ? junction to case r thjc dc operation 2.5 c/w maximum thermal resistance ? junction to ambient r thja 62 typical thermal resistance, ? case to heatsink r thcs mounting surface, smooth and greased 0.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-220 full-pak 10etf10fp 10etf12fp
vs-10etf1...fppbf series, vs-10etf1...fp-m3 series www.vishay.com vishay semiconductors revision: 18-jun-13 3 document number: 94093 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current 140 150 70 0 2 4 6 8 10 12 maximum allowable case temperature (c) average forward current (a) 130 120 110 100 90 80 30 60 90 180 120 10etf.. series r thjc (dc) = 2.5 c/ w cond u ction angle ? 0246810 18 maximum allowable case temperature (c) average forward current (a) 12 14 10etf.. series r thjc (dc) = 2.5 c/ w ? cond u ction period 30 60 90 180 120 dc 140 150 70 130 120 110 100 90 80 16 0246810 maximum average forward power loss (w) average forward current (a) 16 0 12 10 8 6 4 2 14 30 60 90 180 120 rms limit 10etf.. series t j = 150 c cond u ction angle ? 02468 16 maximum average forward power loss (w) average forward current (a) 24 0 16 12 8 4 20 10 12 14 10etf.. series t j = 150 c dc 30 60 90 180 120 rms limit ? cond u ction period peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 1 10 100 30 40 50 60 70 80 90 100 110 120 130 v s -10etf.. s erie s at any rated load condition and with rated vrrm applied following s urge. initial tj = 150c at 60 hz 0.0083 s at 50 hz 0.0100 s peak half sine wave forward current (a) pulse train duration (s) 0.01 0.1 1 10 0 20 40 60 80 100 120 140 maximum non-repetitive s urge current ver s u s pul s e train duration. initial tj = tj max. no voltage reapplied rated vrrm reapplied v s -10etf.. s erie s
vs-10etf1...fppbf series, vs-10etf1...fp-m3 series www.vishay.com vishay semiconductors revision: 18-jun-13 4 document number: 94093 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c fig. 12 - recovery current characteristics, t j = 25 c 1000 10 1 0.5 1.0 1.5 2.0 2.5 4.5 instantaneous forward current (a) instantaneous forward voltage (v) 10etf.. series t j = 150 c t j = 25 c 100 4.0 3.0 3.5 0.6 0.3 0 0 40 80 120 160 200 t rr - typical reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.1 0.2 0.5 0.4 10etf.. series t j = 25 c i fm = 10 a i fm = 1 a i fm = 2 a i fm = 5 a i fm = 8 a 0.8 0.6 0 0 40 80 120 160 200 t rr - typical reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.2 0.4 10etf.. series t j = 150 c i fm = 8 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a 1.6 0 0 40 80 120 160 200 q rr - typical reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 0.4 0.8 1.2 i fm = 1 a i fm = 2 a i fm = 5 a i fm = 10 a i fm = 8 a 10etf.. series t j = 25 c 2.0 5 3 0 0 40 80 120 160 200 q rr - typical reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 1 2 4 10etf.. series t j = 150 c i fm = 1 a i fm = 2 a i fm = 5 a i fm = 10 a i fm = 8 a 20 12 0 0 40 80 120 160 200 i rr - typical reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 4 8 16 10etf.. series t j = 25 c i fm = 1 a i fm = 2 a i fm = 5 a i fm = 10 a i fm = 8 a
vs-10etf1...fppbf series, vs-10etf1...fp-m3 series www.vishay.com vishay semiconductors revision: 18-jun-13 5 document number: 94093 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 13 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 25 15 0 0 40 80 120 160 200 i rr - typical reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 5 10 20 10etf.. series t j = 150 c i fm = 10 a i fm = 5 a i fm = 2 a i fm = 1 a i fm = 8 a 0.1 1 10 10 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 steady state v al u e (dc operation) 10etf.. series single p u lse
vs-10etf1...fppbf series, vs-10etf1...fp-m3 series www.vishay.com vishay semiconductors revision: 18-jun-13 6 document number: 94093 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-10etf10fppbf 50 1000 anti static plastic tubes vs-10etf10fp-m3 50 1000 anti static plastic tubes vs-10etf12fppbf 50 1000 anti static plastic tubes vs-10etf12fp-m3 50 1000 anti static plastic tubes 1 - current rating (10 = 10 a) - vishay semiconductors product 2 - circuit configuration: e = single diode 3 - package: t = to-220 4 - type of silicon: f = fast soft recovery rectifier 5 - voltage code x 100 = v rrm 6 - full-pak 7 8 - pbf = lead (pb)-free and rohs compliant environmental digit: -m3 = halogen-free, rohs compliant and terminations lead (pb)-free 02 = 200 v 04 = 400 v 06 = 600 v device code 5 1 3 2 4 6 7 8 10 vs- e t f 12 fp pbf links to related documents dimensions www.vishay.com/doc?95005 part marking information to-220 fp pbf www.vishay.com/doc?95009 to-220 fp -m3 www.vishay.com/doc?95440
outline dimensions www.vishay.com vishay semiconductors revision: 20-jul-11 1 document number: 95005 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters 5 0.5 3.3 3.1 5 0.5 0.9 0.7 2.54 typ. 2.54 typ. 10.6 10.4 3.7 3.2 7.31 6.91 0.61 0.38 2.85 2.65 2.8 2.6 1.4 1.3 10 4.8 4.6 16.0 15.8 16.4 15.4 (2 places) r 0.7 r 0.5 hole ? 3.4 3.1 typ. 1.15 1.05 13.56 13.05 lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220 full-pak
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